The project has been organized in six workpackages:

WP1: Design and Simulation (Leader: C. Dimitriadis)

Objectives: (a) To identify the most appropriate geometry for SiNW FETs and (b) to compare the experimental data and simulation results in order to realize a preliminary model for SiNW-based Charge-Trapping NVMs including Tri-Gate and GAA JL Si-NW FETs.

WP2: Fabrication of SiNWsusing Electron BeamLithography and Plasma Etching (Leader: N. Glezos)

Objectives: (a) To master EBL-based processes for creating a reliable SiNW technology platform, (b) to develop processes for accurate alignment of the very narrow gates on 3D Si structures and (c) to gain in-depth knowledge on SiNW shape control.

WP3: Fabrication of Tri-gate and GAA JunctionlessSiNWFETs (Leader: P. Normand)

Objectives: (a) To acquire the technology know-how needed in fabrication of Si-NW FETs, (b) to understand the principles of their operation, (c) to demonstrate GAA JL SiNW FETs.

WP4: Fabrication of Charge Trapping Tri-gate and GAA JL SiNW FET Memory Cells (Leader: V. Ioannou-Sougleridis)

Objectives: (a) To demonstrate CT Tri-gate and GAA JL SiNW FETs and (b) To achieve faster with lower power consumption CT NVMs compared to the existing planar Flash technology

WP5: ElectricalCharacterization (Leader: P. Dimitrakis)

Objectives: (a) To precisely evaluate the electrical properties of the produced Si-NWs and nanodevices in order to draw safe conclusions on the observed phenomena and mechanisms governing their operation, (b) To perform in depth memory testing of the fabricated charge-trapping SiNW FET memories.

WP6: Communication and DisseminationActivities (Leader: P. Normand)

Objectives: (a) To create and maintain a website to include information regarding the activities and achievements of the project, (b) To insure broad dissemination of the project’s results through key conferences, specialized conferences/workshops and high-impact journal publications. In order to inform the general public about new products originating from the proposed research, publications will be carried-out in International and Greek press and specific magazines.